onsemi RFD14N05
$ 0.351
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
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Dieser Teil
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Price @ 1000
$ 0.351
$ 0.417
Stock
68,875
135,435
Authorized Distributors
3
1
Mount
Through Hole
Through Hole
Case/Package
TO-251-3
TO-220AB
Drain to Source Voltage (Vdss)
50 V
50 V
Continuous Drain Current (ID)
14 A
14 A
Threshold Voltage
4 V
-
Rds On Max
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
20 V
10 V
Power Dissipation
48 W
48 W
Input Capacitance
570 pF
670 pF
Verwandte Teile
InfineonIRFU024NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;I-Pak (TO-251AA);PD 45W
InfineonIRFU5505PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;I-Pak (TO-251AA);PD 57W
Beschreibungen
Beschreibungen von onsemi RFD14N05, die von den Distributoren bereitgestellt werden.
Tube Through Hole N-Channel Single Mosfet Transistor 14A Tc 14A 48W 17ns
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-251; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; SMD Marking:RFD14N05; Termination Type:Through Hole; Turn Off Time:17ns; Turn On Time:26ns; Voltage Vds Typ:50V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance570 pF
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation48 W
Rds On Max100 mΩ
Resistance100 mΩ
Rise Time26 ns
Threshold Voltage4 V
Turn-Off Delay Time45 ns
Voltage Rating (DC)50 V
Dimensions
Lead Length9.65 mm
Datenblätter und Dokumente
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Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen