onsemi RFD14N05L

Transistor RFD14N05L Power MOSFET N-Channel 50 Volt 14 Amp TO-251AA
EOL
HerstellerseiteDatenblatt

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DistributorSKUMinPkg
FarnellRFD14N05L01
13h
element14 APACRFD14N05L01
2h
Component Stockers USARFD14N05L1.610
>1wk
Weyland Electronics Group Pte. Ltd.RFD14N05L9.9011Tape & Reel
18h
Win SourceWS-RFD14N05L11.9626
13h

Datenblätter und Dokumente

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Technical Drawing1 SeiteVor 6 Jahren

IHS

Fairchild Semiconductor

onsemi

Farnell

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3-Monats-Trend:
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Alternative Teile

Dieser Teil
Alternative Teile
onsemiRFD14N05L
onsemiRFP14N05L
onsemiRFP14N05L
Price @ 1000
$ 0.417
$ 0.417
Stock
228,240
127,539
127,539
Authorized Distributors
2
1
1
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-251-3
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
50 V
50 V
50 V
Continuous Drain Current (ID)
14 A
14 A
14 A
Threshold Voltage
2 V
-
-
Rds On Max
100 mΩ
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
10 V
10 V
10 V
Power Dissipation
48 W
48 W
48 W
Input Capacitance
670 pF
670 pF
670 pF

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi RFD14N05L, die von den Distributoren bereitgestellt werden.

Transistor RFD14N05L Power MOSFET N-Channel 50 Volt 14 Amp TO-251AA
Jameco
N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ
onsemi
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
IHS
N-Channel 50 V 0.100 Ohm Through Hole Logic Level Power Mosfet - TO-251AA
Future Electronics
MOSFET, N, LOGIC, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:40W; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:50V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
element14 APAC
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
Fairchild Semiconductor

Bilder

Distrelec
Augswan
element14
element14 APAC
TME
element14
Conrad
Distrelec
Rochester Electronics
Jameco
iiiC
Future Electronics

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  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
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  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • RFD14N05L.