Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | NDS336P | 0 | 5 | Cut Tape | 10h | |||||||
| Win Source | WS-NDS336P | 30.800 | 335 | 1h | ||||||||
| Worldway Electronics | NDS336P | 29.529 | 7 | Tape & Reel | 1d | |||||||
| Chipsmall Limited | NDS336P | 1.800.000 | 1 | 5h | ||||||||
| RC Electronics | NDS336P | 61.112 | 1 | >1wk |
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für onsemi NDS336P herunter.
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-05-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRLML2402GTRPBF
MOSFET, 20V, 1.2A, 250 MOHM, 2.6 NC QG, LOGIC LEVEL, SOT-23, HALOGEN-FREE
InfineonIRLML2402TRPBF
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-12V
Beschreibungen
Beschreibungen von onsemi NDS336P, die von den Distributoren bereitgestellt werden.
Trans MOSFET P-CH 20V 1.2A 3-Pin SuperSOT T/R
P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Package/Case:3-SuperSOT; Drain-Source Breakdown Voltage:-20V; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Current Rating:-1.2A ;RoHS Compliant: No
MOSFET, P, SOT-23; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:1.2A; Resistance, Rds On:0.27ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.78V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.5W; Power, Pd:0.5W; SMD Marking:336P; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:20V; Voltage, Vgs th Max:-1V; Width, External:3.05mm; Width, Tape:8mm
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technische Spezifikationen
Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.2 A
Current Rating-1.2 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance360 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation460 mW
Rds On Max200 mΩ
Rise Time29 ns
Turn-Off Delay Time33 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.12 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für onsemi NDS336P herunter.