onsemi MUN5311DW1T1G
$ 0.064
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MUN5311DW1T1G | 6.000 | 3K | 1d | ||||||||
| Newark | MUN5311DW1T1G | 78.690 | 5 | Cut Tape | ||||||||
| Verical | MUN5311DW1T1G | 5.347 | 231 | |||||||||
| Arrow Electronics | MUN5311DW1T1G | 5.347 | 1 | |||||||||
| Future Electronics | MUN5311DW1T1G | 12.000 | 3K | Tape & Reel |
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3-Monats-Trend: -24.41%
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Price @ 1000
$ 0.064
$ 0.055
Stock
7,630,791
882,671
Authorized Distributors
6
3
Mount
-
Surface Mount
Case/Package
SOT-363-6
-
Polarity
NPN, PNP
NPN, PNP
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
35
35
Power Dissipation
187 mW
150 mW
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Verwandte Teile
onsemiMUN5211DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm
onsemiMUN5330DW1T1G
ON SEMI MUN5330DW1T1G DUAL NPN+PNP BIPOLAR TRANSISTOR,0.1 A,50V,6-PIN SOT-363
onsemiMUN5111DW1T1G
Bipolar Pre-Biased / Digital Transistor, Dual PNP, 50 V, 100 mA, 10 kohm, 10 kohm
Beschreibungen
Beschreibungen von onsemi MUN5311DW1T1G, die von den Distributoren bereitgestellt werden.
Dual Bias Resistor BJT NPN/PNP Transistor 50 Volt 100mA 6-Pin SOT-363
Bipolar Transistors (BJT); MUN5311DW1T1G; ON SEMICONDUCTOR; NPN, PNP; 6; 50 V; 100 mA
Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm
R1=10 KILO OHM, R2=10 KILO OHM COMPLEMENTARY BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MUN5311DW1T1G NPN+PNP DIGI TRANSISTOR,100MA 50V 10 KOHM, RATIO OF 1,6-PIN SC-88
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 10K/10Kohm, Sc88, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5311DW1T1G.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -24.41%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationDual
hFE Min35
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation385 mW
Min Operating Temperature-55 °C
Number of Elements2
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN, PNP
Power Dissipation187 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm
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Compliance
Umweltklassifizierung
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen