onsemi MUN5212T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
$ 0.043
Production
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
AvnetMUN5212T1G5.86045K
2d
Newark
2
MUN5212T1G10.1185Cut Tape
Verical
3
MUN5212T1G15.0006
Arrow ElectronicsMUN5212T1G15.0001
Rochester ElectronicsMUN5212T1G130.850
14m

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi MUN5212T1G herunter.

Master Electronics

Datasheet12 SeitenVor 9 Jahren

IHS

onsemi

Newark

_legacy Avnet

Bestandsverlauf

3-Monats-Trend:
-25.26%
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Alternative Teile

Dieser Teil
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onsemiMUN5212T1G
onsemiMUN5212T1
Price @ 1000
$ 0.043
$ 0.044
Stock
1,486,166
512,864
Authorized Distributors
6
2
Mount
-
Surface Mount
Case/Package
SC
SC
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
-
-
hFE Min
60
60
Power Dissipation
310 mW
150 mW

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Details

Beschreibungen

Beschreibungen von onsemi MUN5212T1G, die von den Distributoren bereitgestellt werden.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
IHS
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
Verical
NPN Bipolar Digital Transistor (BRT)
onsemi
MUN5212 Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70-3
Future Electronics
250mV@ 300¦ÌA,10mA NPN - Pre-Biased 310mW 5V 500nA 50V 50V 100mA SOT-323 2.1mm*1.24mm*850¦Ìm
UnikeyIC
60@5mA,10V NPN- 202mW 100mA 50V 500nA SOT-323(SC-70) Digital Transistors ROHS
Dasenic
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Farnell
TRANS, AEC-Q101, NPN, 50V, 0.1A, SOT-323; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22k
element14 APAC
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
North Star Micro

Bilder

Newark
Newark
Farnell
Future Electronics
Rochester Electronics
LZChips

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd