NXP Semiconductors PDTC144WE,115
$ 0.083
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | PDTC144WE,115 | 47.730 | 11h | |||||||||
| UnikeyIC | PDTC144WE,115 | 45.637 | 1727 | Cut Tape | 1d | |||||||
| Verical | PDTC144WE,115 | 12.200 | 3637 | |||||||||
| Win Source | WS-PDTC144WE,115 | 15.200 | 95 | 12h | ||||||||
| Worldway Electronics | PDTC144WE115 | 15.826 | 7 | 11h |
Bestandsverlauf
3-Monats-Trend: +0.00%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-08-18
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Verwandte Teile
NXP SemiconductorsBC847AT,115
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110
Beschreibungen
Beschreibungen von NXP Semiconductors PDTC144WE,115, die von den Distributoren bereitgestellt werden.
Trans Digital BJT NPN 50V 100mA 150mW Automotive 3-Pin SC-75 T/R
Tape & Reel (TR) Surface Mount NPN SINGLE WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 60 @ 5mA 5V 100mA 150mW 50V
TRANS NPN W/RES SOT-416; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: -; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 60hFE; Transistor Case Styl
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1/R2:0.47 ;RoHS Compliant: Yes
TRANS NPN W/RES SOT-416; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC Collector Current:100mA; DC Current Gain hFE:60; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:150mV; Current Ic Continuous a Max:10mA; Hfe Min:60; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
Aliasnamen des Herstellers
NXP Semiconductors verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. NXP Semiconductors ist möglicherweise auch unter den folgenden Namen bekannt:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Bestandsverlauf
3-Monats-Trend: +0.00%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationSingle
hFE Min60
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation150 mW
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingDigi-Reel®
PolarityNPN
Power Dissipation150 mW
TerminationSMD/SMT
Dimensions
Height6.35 mm
Length6.35 mm
Width6.35 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen