onsemi FDMC86340

PT7 N-ch 80/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
$ 0.942
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DistributorSKUMinPkg
Avnet
2
FDMC863403.0003K
3d
Newark
2
FDMC863403.3751Cut Tape
Arrow ElectronicsFDMC863406.0001
Verical
4
FDMC863406.0008
Rochester ElectronicsFDMC863406.330
4h

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Datasheet8 SeitenVor 3 Jahren
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Fairchild Semiconductor

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-06-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi FDMC86340, die von den Distributoren bereitgestellt werden.

PT7 N-ch 80/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
Newark
N-Channel Shielded Gate Power Trench® MOSFET 80V, 48A, 6.5mΩ
onsemi
2.3W(Ta),54W(Tc) 20V 4V@ 250¦ÌA 53nC@ 10V 1N 80V 6.5m¦¸@ 14A,10V 14A,48A 3.885nF@40V QFN 800¦Ìm
UnikeyIC
N-CHANNEL SHIELDED GATE POWER TRENCH MOSFET Power Field-Effect Transistor, 14A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
ComSIT Distribution GmbH
MOSFET, N-CH, 48A, 80V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.4V; Power
Farnell
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Fairchild Semiconductor

Bilder

Newark
LZChips
UTSource
Rochester Electronics

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