onsemi FCPF11N60

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F
$ 1.557
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NewarkFCPF11N606121
Verical
5
FCPF11N6099
Arrow Electronics
2
FCPF11N6091
Rochester Electronics
2
FCPF11N6011.000
8h
DigiKeyFCPF11N60-ND671Tube

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Farnell

Datasheet0 SeitenVor 0 Jahren
Datasheet10 SeitenVor 22 Jahren
Datasheet8 SeitenVor 17 Jahren
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Future Electronics

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-01-05
Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)

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Beschreibungen

Beschreibungen von onsemi FCPF11N60, die von den Distributoren bereitgestellt werden.

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F
onsemi
Single N-Channel 600 V 36 W 52 nC Silicon Through Hole Mosfet - TO-220F
Future Electronics
Power MOSFET, N Channel, 600 V, 11 A, 0.38 ohm, TO-220F, Through Hole
EBV Elektronik
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Semicontronic
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220F; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
element14 APAC
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Fairchild Semiconductor
SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @Tj = 150C Typ. Rds(on)=0.32W Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested
North Star Micro

Bilder

DKO Electronshik
TME
iiiC
element14 APAC
Future Electronics
element14
LZChips
Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • FCPF11 N60
  • FCPF11N60.