onsemi FQPF12N60C
$ 1.238
Obsolete
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Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
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Price @ 1000
$ 1.238
$ 1.16
Stock
122,306
334,374
Authorized Distributors
4
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
4 V
-
Rds On Max
650 mΩ
650 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
51 W
39 W
Input Capacitance
2.29 nF
1.676 nF
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-03-05
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
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Mosfet Transistor, N Channel, 14 A, 500 V, 340 Mohm, 10 V, 3.75 V Rohs Compliant: Yes
Beschreibungen
Beschreibungen von onsemi FQPF12N60C, die von den Distributoren bereitgestellt werden.
Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220F
600V 12A 51W 650m´Î@10V6A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.53ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance650 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.29 nF
Max Operating Temperature150 °C
Max Power Dissipation51 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation51 W
Rds On Max650 mΩ
Rise Time85 ns
Threshold Voltage4 V
Turn-Off Delay Time155 ns
Voltage Rating (DC)600 V