Infineon IRLR6225PBF
$ 2.55
Obsolete
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Price @ 1000
$ 2.55
$ 0.621
Stock
56,492
926,836
Authorized Distributors
2
4
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
800 mV
-
Rds On Max
4 mΩ
4 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
63 W
63 W
Input Capacitance
3.77 nF
3.77 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
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onsemiNTD110N02R
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Beschreibungen
Beschreibungen von Infineon IRLR6225PBF, die von den Distributoren bereitgestellt werden.
Inductor RF Chip Wirewound 2.4nH 0.2nH 100MHz 20Q-Factor 850mA 50mOhm DCR 0402 Paper T/R
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 42A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1; Logic Level
MOSFET,N CH,20V,124A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:20V; On Resistance Rds(on):3200µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:63W; Voltage Vgs Max:12V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.77 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation63 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels1
Number of Elements1
On-State Resistance4 mΩ
Package Quantity3000
Power Dissipation63 W
Rds On Max4 mΩ
Recovery Time53 ns
Rise Time37 ns
Threshold Voltage800 mV
Turn-Off Delay Time63 ns
Turn-On Delay Time9.7 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm
Compliance
Umweltklassifizierung
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen