Infineon IRLR3915TRPBF
$ 0.621
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IRLR3915TRPBFCT-ND | 1.697 | 1 | Cut Tape | ||||||||
| Newark | IRLR3915TRPBF | 3.480 | 1 | Cut Tape | ||||||||
| Future Electronics | IRLR3915TRPBF | 2.000 | 2K | Tape & Reel | ||||||||
| Arrow Electronics | IRLR3915TRPBF | 4.539 | 1 | |||||||||
| Rutronik | TMOSP12649 | 56.000 | 2K | 14h |
Bestandsverlauf
3-Monats-Trend: -16.82%
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CAD-Modelle
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRLR3915PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 12 Milliohms;ID 61A;D-Pak (TO-252AA);PD 120W
InfineonAUIRFR2405
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package
InfineonIRFR5305PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
VishaySIS434DN-T1-GE3
Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
Diodes Inc.DMP4015SK3Q-13
Trans MOSFET P-CH 40V 14A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 14A TO252 DPAK
Beschreibungen
Beschreibungen von Infineon IRLR3915TRPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 12 Milliohms;ID 61A;D-Pak (TO-252AA);PD 120W
T&R / MOSFET, 55V, 61A, 14 mOhm, 61 nC Qg, Logic Level, D-Pak
Single N-Channel 55 V 17 mOhm 92 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
MOSFET, N-CH, 55V, 30A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 120W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 14 / Gate-Source Voltage V = 16 / Fall Time ns = 100 / Rise Time ns = 51 / Turn-OFF Delay Time ns = 83 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 120
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -16.82%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.87 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance14 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation120 W
Rds On Max14 mΩ
Resistance14 MΩ
Rise Time51 ns
Schedule B8541290080
Turn-Off Delay Time83 ns
Turn-On Delay Time7.4 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen