Infineon IRLR3105TRPBF
$ 0.528
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: +17.18%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
CAD-Modelle
Laden Sie Infineon IRLR3105TRPBF Symbol-, Footprint- und 3D-STEP-Modelle von unseren zuverlässigen Partnern herunter.
| QUELLE | eCAD | mCAD | DATEIEN |
|---|---|---|---|
 EE Concierge | SymbolFußabdruck | ||
 SnapEDA | Fußabdruck | Herunterladen |
Beim Herunterladen der CAD-Modelle wird die Partner-Website in einem neuen Tab geöffnet.
Durch das Herunterladen von CAD-Modellen von Octopart stimmen Sie unseren Allgemeinen Geschäftsbedingungen und unserer Datenschutzrichtlinie zu.
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-08-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
InfineonAUIRLR3105
Power Field-Effect Transistor, 25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRLR2705TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
onsemiHUF75321D3S
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 20A DPAK
Beschreibungen
Beschreibungen von Infineon IRLR3105TRPBF, die von den Distributoren bereitgestellt werden.
IRLR3105TRPBF N-channel MOSFET Transistor, 25 A, 55 V, 3-Pin DPAK
Single N-Channel 55 V 37 mOhm 13.3 nC HEXFET® Power Mosfet - DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 55 V, 25 A, 0.037 ohm, TO-252AA, Surface Mount
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 55V, 25A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 57W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 25 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 37 / Gate-Source Voltage V = 16 / Fall Time ns = 37 / Rise Time ns = 57 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 57
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +17.18%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance37 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance710 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation57 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance37 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation57 W
Rds On Max37 mΩ
Rise Time57 ns
Schedule B8541290080
Turn-Off Delay Time25 ns
Turn-On Delay Time8 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen