Infineon IRLR3105PBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 0.55
Stock
138,674
1,321,141
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
25 A
25 A
Threshold Voltage
3 V
-
Rds On Max
37 mΩ
37 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
57 W
57 W
Input Capacitance
710 pF
710 pF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-08-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Verwandte Teile
InfineonAUIRLR3105
Power Field-Effect Transistor, 25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRLR2705TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
onsemiHUF75321D3S
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 20A DPAK
Beschreibungen
Beschreibungen von Infineon IRLR3105PBF, die von den Distributoren bereitgestellt werden.
IRLR3105PBF N-channel MOSFET Transistor, 25 A, 55 V, 3-Pin DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 55V, 25A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:55V; On Resistance Rds(on):37mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:25A; Junction to Case Thermal Resistance A:2.65°C/W; On State resistance @ Vgs = 10V:37mohm; Package / Case:DPAK; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)25 A
Current Rating25 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance37 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance710 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation57 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance37 mΩ
Package Quantity3000
Power Dissipation57 W
Rds On Max37 mΩ
Resistance37 mΩ
Rise Time57 ns
Threshold Voltage3 V
Turn-Off Delay Time25 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)55 V
Dimensions
Height2.52 mm
Length6.73 mm
Width6.223 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen