QUELLE	eCAD	mCAD	DATEIEN
Component Search Engine	SymbolFußabdruck	3D	Herunterladen
EE Concierge	SymbolFußabdruck
SnapEDA	SymbolFußabdruck	3D	Herunterladen
Ultra Librarian	SymbolFußabdruck		Herunterladen

Beim Herunterladen der CAD-Modelle wird die Partner-Website in einem neuen Tab geöffnet.

Durch das Herunterladen von CAD-Modellen von Octopart stimmen Sie unseren Allgemeinen Geschäftsbedingungen und unserer Datenschutzrichtlinie zu.

Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-09-01

Lifecycle StatusObsolete (Last Updated: 1 month ago)

LTB Date2026-06-30

LTD Date2027-12-31

Beschreibungen

Beschreibungen von Infineon IRLML6401TRPBF, die von den Distributoren bereitgestellt werden.

MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 0.05Ohm;ID -4.3A;Micro3;PD 1.3W;VGS +/-8V

RS (Formerly Allied Electronics)

MOSFET P-CH 12V 4.3A SOT23 P-Channel 12 V 4.3A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23

Eurochip Technologies LTD

-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R / HEXFET Power MOSFET

Win Source

Single P-Channel 12 V 0.05 Ohm 10 nC SMT HEXFET® Power Mosfet - MICRO-3

Future Electronics

Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3

Jak Electronics

MOSFET, P, MICRO3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.05ohm; Rds(on) Test; Available until stocks are exhausted Alternatives available

element14 APAC

Mosfet, P Channel, -12V, -4.3A, Sot-23-3, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:1.3W Rohs Compliant: Yes |Infineon Technologies IRLML6401TRPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:4.3A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.55V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:34A; Power Dissipation:1.3W; Power, Pd:1.3W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 10V:0.05ohm; Thermal Resistance, Junction to Case A:100°C/W; Voltage, Vds Max:12V; Voltage, Vgs th Min:-0.4V; Width, Tape:8mm

Farnell

Bilder

South Microelectronics

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

Infineon Technologies
INF
INFINEO
INFINE
INFIN
INFINION
INFI
INFENION
SIM
INFIEON
INFINEON TECH
INFINEN
IFX
INFIENON
IR/INFINEON
INFINEON/IR
IFT
INFINEON/SIEMENS
LNFINEON
INFN
Infineon Tech ICs
INFINEON TECHNOLOGIE
NFINEON
INFINEON/Infineon
INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

IRFIRLML6401TRPBF
IRLML 6401
IRLML6401
IRLML6401TR/PBF
IRLML6401TRPBF.
SP001577044

Bestandsverlauf

3-Monats-Trend: -39.05%

CAD-Modelle

Symbol, Footprint und 3D STEP herunterladen

Alternative Teile

0 Teile verfügbar

Technische Spezifikationen

Physical

Case/PackageSOT-23

Contact PlatingTin

MountSurface Mount

Number of Pins3

Number of Terminals3

Technical

Continuous Drain Current (ID)4.3 A

Current Rating-4.3 A

Drain to Source Breakdown Voltage-12 V

Drain to Source Resistance50 mΩ

Drain to Source Voltage (Vds)-12 V

Dual Supply Voltage-12 V

Element ConfigurationSingle

Fall Time210 ns

Gate to Source Voltage (Vgs)8 V

Input Capacitance830 pF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation1.3 W

Min Breakdown Voltage12 V

Min Operating Temperature-55 °C

Nominal Vgs-550 mV

Number of Channels1

Number of Elements1

On-State Resistance50 mΩ

Package Quantity3000

PackagingTape & Reel

Power Dissipation1.3 W

Rds On Max50 mΩ

Resistance50 mΩ

Rise Time32 ns

Schedule B8541290080

TerminationSMD/SMT

Threshold Voltage-550 mV

Turn-Off Delay Time250 ns

Turn-On Delay Time11 ns

Voltage Rating (DC)-12 V

Dimensions

Height1.12 mm

Length3.0226 mm

Width1.397 mm