Infineon IRL3713STRRPBF
$ 5.08
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRL3713STRRPBF | 0 | 800 | Bulk | 10h | |||||||
| Win Source | WS-IRL3713STRRPBF | 1.400 | 2 | 19h | ||||||||
| Worldway Electronics | IRL3713STRRPBF | 18.496 | 7 | Tape & Reel | 18h | |||||||
| SHENGYU ELECTRONICS | IRL3713STRRPBF | 14.672 | 1 | 3d | ||||||||
| Run Hong Electronics | IRL3713STRRPBF | 8.322 | 6h |
Bestandsverlauf
3-Monats-Trend: Restocked
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Price @ 1000
$ 5.08
$ 7.61
$ 7.61
Stock
63,571
70,967
70,967
Authorized Distributors
1
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
-
2.5 V
2.5 V
Rds On Max
3 mΩ
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 W
200 W
200 W
Input Capacitance
5.89 nF
5.89 nF
5.89 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRL3713SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;D2Pak;PD 330W;VGS +/-2
STMicroelectronicsSTB200NF03T4
N-CHANNEL 30V - 0.0032 OHM - 120A D2PAK STripFET II POWER MOSFET
InfineonIRL7833SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 150A;D2Pak;PD 140W;VGS +/-2
STMicroelectronicsSTB155N3LH6
N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
Beschreibungen
Beschreibungen von Infineon IRL3713STRRPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;D2Pak;PD 330W;VGS +/-2
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
Trans MOSFET N-CH 30V 260A 3-Pin(2+Tab) D2PAK T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:260A; On Resistance, Rds(on):3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: Restocked
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.89 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max3 mΩ
Rise Time160 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time16 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen