Infineon IRL7833SPBF
$ 2.51
Obsolete
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Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Alternative Teile
Dieser Teil
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Price @ 1000
$ 2.51
$ 5.62
Stock
94,134
94,755
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
1.4 V
-
Rds On Max
3.8 mΩ
3.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
4.17 nF
4.17 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
STMicroelectronicsSTB155N3LH6
N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
onsemiNTB125N02RT4
Cut Tape (CT) Surface Mount N-CHANNEL Single Mosfet Transistor 120.5A 1.98W 21ns 24V
InfineonIRL2203NSTRLPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 116A;D2Pak;PD 180W;VGS +/-16V
Beschreibungen
Beschreibungen von Infineon IRL7833SPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 150A;D2Pak;PD 140W;VGS +/-2
Single N-Channel 30 V 3.8 mOhm 32 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 30V 150A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 30V 150A D2PAK
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET, N, LOGIC, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:560mJ; Capacitance Ciss Typ:4170pF; Current Id Max:150A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:600A; Reverse Recovery Time trr Typ:42ns; SMD Marking:7833S; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.3V; Voltage Vgs th Min:1.4V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating150 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time6.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.17 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.3 V
Number of Channels1
Number of Elements1
On-State Resistance3.8 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation140 W
Rds On Max3.8 mΩ
Recovery Time63 ns
Resistance3.8 MΩ
Rise Time50 ns
Threshold Voltage1.4 V
Turn-Off Delay Time21 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)30 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen