Infineon IRL3713SPBF
$ 2.99
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 2.99
$ 7.44
$ 7.44
Stock
98,968
103,423
103,423
Authorized Distributors
1
1
1
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
2.5 V
2.5 V
2.5 V
Rds On Max
3 mΩ
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 W
200 W
200 W
Input Capacitance
5.89 nF
5.89 nF
5.89 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-11
Lifecycle StatusObsolete (Last Updated: 6 months ago)
Verwandte Teile
InfineonIRL3713STRLPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;D2Pak;PD 330W;VGS +/-2
InfineonIRL3713STRRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;D2Pak;PD 330W;VGS +/-2
InfineonIRL7833SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 150A;D2Pak;PD 140W;VGS +/-2
STMicroelectronicsSTB200NF03T4
N-CHANNEL 30V - 0.0032 OHM - 120A D2PAK STripFET II POWER MOSFET
STMicroelectronicsSTB80NF03L-04T4
N-Channel 30V - 0.0035Ohm - 80A - D2PAK STripFET (TM) II POWER MOSFET
Beschreibungen
Beschreibungen von Infineon IRL3713SPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;D2Pak;PD 330W;VGS +/-2
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Transistor MOSFET N Channel 30 Volt 260 Amp 3-Pin 2+ Tab D2pak
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
N CHANNEL MOSFET, 30V, 260A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:260A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3mohm; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:1040A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.89 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
On-State Resistance3 mΩ
Package Quantity1000
Power Dissipation200 W
Rds On Max3 mΩ
Resistance3 mΩ
Rise Time160 ns
Threshold Voltage2.5 V
Turn-Off Delay Time40 ns
Turn-On Delay Time16 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen