Infineon IRFSL4310PBF
$ 3.94
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-12
LTD Date2018-04-12
Verwandte Teile
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Beschreibungen
Beschreibungen von Infineon IRFSL4310PBF, die von den Distributoren bereitgestellt werden.
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time78 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.67 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance7 mΩ
Package Quantity1000
Power Dissipation330 W
Rds On Max7 mΩ
Rise Time110 ns
Threshold Voltage4 V
Turn-Off Delay Time68 ns
Turn-On Delay Time26 ns
Dimensions
Height9.65 mm
Length10.67 mm
Width4.83 mm