Infineon IRFS7734-7PPBF
$ 5.58
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 5.58
$ 2.625
Stock
47,386
89,325
Authorized Distributors
1
2
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-7
TO-263-7
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
197 A
197 A
Threshold Voltage
-
-
Rds On Max
3.05 mΩ
3.05 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
294 W
294 W
Input Capacitance
10.13 nF
10.13 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-08-06
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
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STMicroelectronicsSTH260N6F6-6
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
Beschreibungen
Beschreibungen von Infineon IRFS7734-7PPBF, die von den Distributoren bereitgestellt werden.
MOSFET N-CH 75V 197A D2PAK / N-Channel 75 V 197A (Tc) 294W (Tc) Surface Mount D²PAK (TO-263AB)
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS
Infineon SCT
Single N-Channel 75 V 3.05 mOhm 180 nC HEXFET® Power Mosfet - D2PAK-7
Trans MOSFET N-CH 75V 197A 7-Pin(6+Tab) D2PAK Tube
MOSFET, 75V, 183A, 3.46 Ohm, 196 nC, D2PAK, TUBE
Power Field-Effect Transistor, 197A I(D), 75V, 0.00305ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Number of Terminals6
Weight1.59999 g
Technical
Continuous Drain Current (ID)197 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3.05 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time75 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.13 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation294 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.05 mΩ
Package Quantity3000
Power Dissipation294 W
Rds On Max3.05 mΩ
Rise Time85 ns
Turn-Off Delay Time123 ns
Turn-On Delay Time17 ns
Dimensions
Height5.084 mm
Length10.54 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen