Infineon IRFS3107-7PPBF
$ 9.27
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFS3107-7PPBF | 0 | 200 | Bulk | 20h | |||||||
| Farnell | IRFS3107-7PPBF | 0 | 1 | 7h | ||||||||
| Microchip USA | IRFS3107-7PPBF | 238 | 600 | Tube | 6d | |||||||
| Win Source | WS-IRFS3107-7PPBF | 23.261 | 12 | 8h | ||||||||
| Worldway Electronics | IRFS3107-7PPBF | 18.369 | 7 | Tube | 6h |
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Price @ 1000
$ 9.27
$ 4.288
Stock
113,952
53,935
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
240 A
240 A
Threshold Voltage
4 V
-
Rds On Max
2.6 mΩ
2.6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
370 W
370 W
Input Capacitance
9.2 nF
9.2 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRFS3107TRL7PP
N CH POWER MOSFET. HEXFET, 75V, 260A, D2PAK; Transistor Polarity:N Channel; Cont
InfineonIRFS7730-7PPBF
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS
Beschreibungen
Beschreibungen von Infineon IRFS3107-7PPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 75 V 2.6 mOhm 240 nC HEXFET® Power Mosfet - D2PAK-7
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHS
Infineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK-7 Polarity: N Power dissipation: 370 W
Trans MOSFET N-CH 75V 260A 7-Pin(6+Tab) D2PAK Tube
MOSFET, 75V, 260A, 2.6 MOHM, 160 NC QG,D2PAK-7
Power Field-Effect Transistor, 260A I(D), 75V, 0.0026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:75V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:370W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9200pF; Current Id Max:260A; Package / Case:D2-PAK; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulse Current Idm:1060A; Reverse Recovery Time trr Typ:52ns; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance2.6 mΩ
Package Quantity3000
Power Dissipation370 W
Rds On Max2.6 mΩ
Resistance2.6 MΩ
Reverse Recovery Time52 ns
Rise Time80 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time100 ns
Turn-On Delay Time17 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen