Infineon IRFS4410ZPBF
$ 3.31
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 3.31
$ 0.95
Stock
593,788
1,136,041
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
97 A
97 A
Threshold Voltage
4 V
-
Rds On Max
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
230 W
230 W
Input Capacitance
4.82 nF
4.82 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-06
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
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Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK
InfineonIRF3808SPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
InfineonIRFS4410TRLPBF
INFINEON IRFS4410TRLPBF MOSFET Transistor, N Channel, 88 A, 100 V, 0.008 ohm, 10 V, 4 VNew
STMicroelectronicsSTB120NF10T4
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in D2PAK package
STMicroelectronicsSTB140NF75T4
STB140NF75T4 N-CHANNEL MOSFET TRANSISTOR, 120 A, 75 V, 3-PIN D2PAK
Beschreibungen
Beschreibungen von Infineon IRFS4410ZPBF, die von den Distributoren bereitgestellt werden.
IRFS4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin D2PAK
Single N-Channel 100 V 9 mOhm 83 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 230 W
Trans MOSFET N-CH 100V 97A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 100V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4410; Current Id Max:97A; Package / Case:D2-PAK; Power Dissipation Pd:230W; Pulse Current Idm:390A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)97 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.82 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation230 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max9 mΩ
Recovery Time57 ns
Resistance9 MΩ
Rise Time52 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height4.83 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen