Infineon IRF3808SPBF

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 5.9MILLIOHMS; Id 106A; D2PAK; Pd 200W; Vgs +/-2
$ 3.19
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRF3808SPBF0300Bulk
19h
FarnellIRF3808SPBF01
1d
Win SourceWS-IRF3808SPBF5.4712
3h
Worldway ElectronicsIRF3808SPBF12.9067Tube
2h
SHENGYU ELECTRONICSIRF3808SPBF12.4701
2d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRF3808SPBF herunter.

IHS

Datasheet13 SeitenVor 12 Jahren
Datasheet12 SeitenVor 12 Jahren

Newark

RS (Formerly Allied Electronics)

DigiKey

Alternative Teile

Dieser Teil
Alternative Teile
InfineonIRF3808SPBF
InfineonIRF3808STRLPBF
InfineonIRF3808STRLPBF
Price @ 1000
$ 3.19
$ 1.43
$ 1.43
Stock
42,266
475,544
475,544
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
75 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
4 V
4 V
4 V
Rds On Max
7 mΩ
7 mΩ
7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 W
200 W
200 W
Input Capacitance
5.31 nF
5.31 nF
5.31 nF

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-12-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16

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Power MOSFET, N Channel, 55 V, 40 A, 0.005 ohm, TO-263 (D2PAK), Surface Mount
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Beschreibungen

Beschreibungen von Infineon IRF3808SPBF, die von den Distributoren bereitgestellt werden.

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
RS (Formerly Allied Electronics)
MOSFET N-CH 75V 106A D2PAK / Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK Tube
Win Source
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Infineon
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:106A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:430mJ; Capacitance Ciss Typ:5310pF; Current Id Max:106A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:550A; Reverse Recovery Time trr Typ:93ns; SMD Marking:F3808; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
element14 APAC

Bilder

Infineon
Farnell
TME
Newark
element14 APAC
Distrelec
Distrelec

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • SP001570146