Infineon IRFS4227PBF
$ 6
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
CAD-Modelle
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Price @ 1000
$ 6
$ 1.13
Stock
314,818
765,147
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
62 A
62 A
Threshold Voltage
5 V
-
Rds On Max
26 mΩ
26 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
330 W
330 W
Input Capacitance
4.6 nF
4.6 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
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InfineonIRFS4229PBF
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package, D2PAK-3, RoHS
onsemiFDB52N20TM
In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM
Beschreibungen
Beschreibungen von Infineon IRFS4227PBF, die von den Distributoren bereitgestellt werden.
Transistor MOSFET Negative Channel 200 Volt 62A 3-Pin(2+Tab) D2PAK
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 200 V 26 mOhm 98 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 200V 62A D2PAK
MOSFET, N Ch., 200V, 62A, 26 MOHM, 70 NC QG, D2-PAK, Pb-Free
79W 30V 4V@ 250uA 58nC@ 10V 1N 100V 200m¦¸@ 10V,8.4A 14A 760pF@25V D2PAK 5.08mm
MOSFET, N, 200V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:200V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-40°C to +180°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:44A; Cont Current Id @ 25°C:62A; Current Id Max:62A; Package / Case:D2-PAK; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)62 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage240 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation330 W
Min Breakdown Voltage200 V
Min Operating Temperature-40 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance26 mΩ
Package Quantity1000
Power Dissipation330 W
Rds On Max26 mΩ
Recovery Time150 ns
Rise Time20 ns
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time21 ns
Turn-On Delay Time33 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen