Infineon IRFS4229PBF
$ 6.5
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 6.5
$ 1.659
Stock
100,119
703,442
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
250 V
250 V
Continuous Drain Current (ID)
45 A
45 A
Threshold Voltage
5 V
-
Rds On Max
48 mΩ
48 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
330 W
330 W
Input Capacitance
4.56 nF
4.56 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
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250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package, D2PAK-3, RoHS
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In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM
InfineonIRFS38N20DTRLP
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;D2Pak;PD 300W;VGS +/-30V
Beschreibungen
Beschreibungen von Infineon IRFS4229PBF, die von den Distributoren bereitgestellt werden.
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 250 V 48 mOhm 110 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 250V 45A D2PAK
MOSFET, N Ch., 250V, 45A, 48 MOHM, 72 NC QG, D2-PAK, Pb-Free
PDP SWITCH Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, 250V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:250V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:45A; Package / Case:D2-PAK; Power Dissipation Pd:330W; Pulse Current Idm:180A; Termination Type:SMD; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)45 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance48 mΩ
Drain to Source Voltage (Vdss)250 V
Dual Supply Voltage250 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.56 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage250 V
Min Operating Temperature-40 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance48 mΩ
Package Quantity1000
Power Dissipation330 W
Rds On Max48 mΩ
Recovery Time290 ns
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time30 ns
Turn-On Delay Time18 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen