Infineon IRFS3207ZPBF
$ 3.66
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 3.66
$ 1.434
$ 1.434
Stock
39,554
252,882
252,882
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
75 V
Continuous Drain Current (ID)
120 A
75 A
75 A
Threshold Voltage
4 V
4 V
4 V
Rds On Max
4.1 mΩ
4.5 mΩ
4.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
300 W
300 W
300 W
Input Capacitance
6.92 nF
7.6 nF
7.6 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
InfineonAUIRFS3206
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTH140N8F7-2
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
VishaySQM120N06-3M5L_GE3
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
STMicroelectronicsSTH170N8F7-2
N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package
Beschreibungen
Beschreibungen von Infineon IRFS3207ZPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET, N Ch., 75V, 170A, 4.1 MOHM, 120NC QG, D2-PAK, Pb-Free
Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 75V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300mW; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3207; Current Id Max:170A; Package / Case:D2-PAK; Power Dissipation Pd:300mW; Pulse Current Idm:670A; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Current Rating170 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.1 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.92 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4.1 mΩ
Package Quantity1000
Power Dissipation300 W
Rds On Max4.1 mΩ
Recovery Time54 ns
Resistance4.1 MΩ
Rise Time68 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)75 V
Dimensions
Height5.084 mm
Length6.73 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen