Infineon IRFS3006-7PPBF
$ 6.94
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
CAD-Modelle
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Price @ 1000
$ 6.94
$ 2.14
Stock
29,571
634,487
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-263-7
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
240 A
240 A
Threshold Voltage
4 V
-
Rds On Max
2.1 mΩ
2.1 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
8.85 nF
8.85 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
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Beschreibungen
Beschreibungen von Infineon IRFS3006-7PPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 60 V 2.1 mOhm 200 nC HEXFET® Power Mosfet - D2PAK-7
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHS
Infineon SCT
MOSFET, 60V, 240A, 2.1MOHM, 200NC QG, D2PAK-7
Trans MOSFET N-CH 60V 293A 7-Pin(6+Tab) D2PAK Tube
Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
MOSFET, N-CH, 60V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:293A; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.5mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:8850pF; Current Id Max:293A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:1172A; Reverse Recovery Time trr Typ:44ns; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time69 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.85 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.1 mΩ
Package Quantity3000
Power Dissipation375 W
Rds On Max2.1 mΩ
Resistance2.1 MΩ
Rise Time61 ns
Threshold Voltage4 V
Turn-Off Delay Time118 ns
Turn-On Delay Time14 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen