Infineon IRFS7730-7PPBF
$ 4.81
Obsolete
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Price @ 1000
$ 4.81
$ 1.776
Stock
56,458
386,032
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-7
TO-263-7
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
269 A
269 A
Threshold Voltage
2.1 V
-
Rds On Max
2 mΩ
2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
13.97 nF
13.97 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
InfineonIRFS7530TRL7PP
Trans MOSFET N-CH Si 60V 338A 7-Pin(6+Tab) D2PAK T/R / MOSFET N CH 60V 240A D2PAK
InfineonIRFS7530TRLPBF
MOSFET N CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 295A 3-Pin(2+Tab) D2PAK T/R
InfineonIRFS7534TRL7PP
INFINEON IRFS7534TRL7PP MOSFET Transistor, N Channel, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V
Beschreibungen
Beschreibungen von Infineon IRFS7730-7PPBF, die von den Distributoren bereitgestellt werden.
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS
Infineon SCT
Single N-Channel 75 V 2 mOhm 285 nC HEXFET® Power Mosfet - D2PAK-7
Trans MOSFET N-CH 75V 269A 7-Pin(6+Tab) D2PAK Tube
MOSFET, 75V, 240A, 2.0 Ohm, 285 nC, D2PAK 7 Pin, TUBE
MOSFET, N-CH, 75V, 269A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 269A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Number of Terminals6
Weight1.59999 g
Technical
Continuous Drain Current (ID)269 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time91 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.97 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2 mΩ
Package Quantity3000
Power Dissipation375 W
Rds On Max2 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage2.1 V
Turn-Off Delay Time182 ns
Turn-On Delay Time20 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen