Infineon IRFR1010ZTRLPBF
$ 0.736
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFR1010ZTRLPBF | 4.450 | 16h | |||||||||
| RS (Formerly Allied Electronics) | IRFR1010ZTRLPBF | 0 | 6K | Bulk | 9h | |||||||
| Microchip USA | IRFR1010ZTRLPBF | 355 | 600 | 10h | ||||||||
| Verical | IRFR1010ZTRLPBF | 4.450 | 339 | |||||||||
| Win Source | WS-IRFR1010ZTRLPBF | 20 | 240 | 17h |
Bestandsverlauf
3-Monats-Trend: +0.00%
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Price @ 1000
$ 0.736
$ 0.784
$ 0.784
Stock
695,885
748,645
748,645
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
-
-
-
Rds On Max
7.5 mΩ
7.5 mΩ
7.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
140 W
140 W
140 W
Input Capacitance
2.84 nF
2.84 nF
2.84 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-31
LTD Date2024-06-30
Verwandte Teile
InfineonIRFR4104PBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 42A;D-Pak (TO-252AA);-55deg
InfineonIRFR4104TRLPBF
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
VishaySIS434DN-T1-GE3
Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
Beschreibungen
Beschreibungen von Infineon IRFR1010ZTRLPBF, die von den Distributoren bereitgestellt werden.
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
T&R / MOSFET, 55V, 91A, 7.5 mOhm, 63 nC Qg, D-Pak
Trans MOSFET N-CH Si 55V 91A 3-Pin(2+Tab) DPAK T/R
140W(Tc) 20V 4V@ 100¦ÌA 95nC@ 10 V 1N 55V 7.5m¦¸@ 42A,10V 42A 2.84nF@25V TO-252 6.5mm*6.22mm*2.3mm
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SSR RELAY SPST-NO 500MA 0-600V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +0.00%
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.84 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance7.5 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max7.5 mΩ
Rise Time76 ns
Schedule B8541290080
Turn-Off Delay Time42 ns
Turn-On Delay Time17 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen