Infineon IRF9Z34NPBF
$ 0.337
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: -3.85%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
1 Teil verfügbar
CAD-Modelle
Laden Sie Infineon IRF9Z34NPBF Symbol-, Footprint- und 3D-STEP-Modelle von unseren zuverlässigen Partnern herunter.
| QUELLE | eCAD | mCAD | DATEIEN |
|---|---|---|---|
 Component Search Engine | SymbolFußabdruck | 3D | Herunterladen |
 EE Concierge | SymbolFußabdruck | ||
 SnapEDA | Fußabdruck | 3D | Herunterladen |
 Ultra Librarian | SymbolFußabdruck | Herunterladen |
Beim Herunterladen der CAD-Modelle wird die Partner-Website in einem neuen Tab geöffnet.
Durch das Herunterladen von CAD-Modellen von Octopart stimmen Sie unseren Allgemeinen Geschäftsbedingungen und unserer Datenschutzrichtlinie zu.
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 0.337
$ 0.791
Stock
1,379,381
156,869
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
19 A
19 A
Threshold Voltage
-4 V
-2 V
Rds On Max
100 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
56 W
68 W
Input Capacitance
620 pF
620 pF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-06-16
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
Beschreibungen
Beschreibungen von Infineon IRF9Z34NPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.1Ohm;ID -19A;TO-220AB;PD 68W;VGS +/-20V
Transistor P-MOSFET ; -55 V; -17 A; 100mOhm ; 56 W; -55+175 deg.C; THT; TO-220-3
Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -19 A, TO-220, IRF9Z34NPBF
Single P-Channel 55 V 0.1 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole
68W 20V 4V@ 250uA 35nC(Max) @ 10V 55V 100m¦¸@ 10V 19A 620pF@ 25V TO-220 8.77mm
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
P Channel Mosfet, -55V, 19A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:19A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF9Z34NPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, P, -55V, -17A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:56W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.7°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:56W; Power Dissipation Pd:56W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -3.85%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)19 A
Current Rating-19 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage-55 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance620 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation56 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance100 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation56 W
Rds On Max100 mΩ
Recovery Time82 ns
Resistance100 mΩ
Rise Time55 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen