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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusProduction (Last Updated: 2 months ago)

Beschreibungen

Beschreibungen von Infineon IRFZ24NPBF, die von den Distributoren bereitgestellt werden.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 17A;TO-220AB;PD 45W;VGS +/-20V

RS (Formerly Allied Electronics)

Transistor MOSFET N Channel 55 Volt 17 Amp 3 Pin 3+ Tab TO-220 AB

Jameco (USA)

MOSFET N-CH 55V 17A TO-220AB / Trans MOSFET N-CH Si 55V 17A 3-Pin(3+Tab) TO-220AB Tube

Win Source

Power MOSFET, N Channel, 55 V, 17 A, 0.07 ohm, TO-220AB, Through Hole

Avnet

Infineon Technologies N channel HEXFET power MOSFET, 55 V, 17 A, TO-220, IRFZ24NPBF

Burklin Elektronik

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, 55V, 17A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.07ohm; Rds(o; Available until stocks are exhausted Alternatives available

element14 APAC

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

Infineon

MOSFET, N, 55V, 17A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:17A; Resistance, Rds On:0.07ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:68A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:45W; Power, Pd:45W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:3.3°C/W; Transistors, No. of:1; Voltage, Vds Max:55V

Farnell

Bilder

RS (Formerly Allied Electronics)

South Microelectronics

International Rectifier

Jameco (USA)

LCSC

SOS electronic

Rochester Electronics

SOS electronic

Newark

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

Infineon Technologies
INF
INFINEO
INFINE
INFIN
INFINION
INFI
INFENION
SIM
INFIEON
INFINEON TECH
INFINEN
IFX
INFIENON
IR/INFINEON
INFINEON/IR
IFT
INFINEON/SIEMENS
LNFINEON
INFN
Infineon Tech ICs
INFINEON TECHNOLOGIE
NFINEON
INFINEON/Infineon
INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

IRFZ 24 NPBF
IRFZ-24-NPBF
IRFZ24/N
IRFZ24N
IRFZ24N/PBF
IRFZ24NPBF .
IRFZ24NPBF.
SP001565128

Bestandsverlauf

3-Monats-Trend: -8.79%

CAD-Modelle

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Alternative Teile

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Technische Spezifikationen

Physical

Case/PackageTO-220AB

Contact PlatingTin

MountThrough Hole

Number of Pins3

Number of Terminals3

Technical

Continuous Drain Current (ID)17 A

Current Rating17 A

Drain to Source Breakdown Voltage55 V

Drain to Source Resistance70 mΩ

Drain to Source Voltage (Vdss)55 V

Dual Supply Voltage55 V

Element ConfigurationSingle

Fall Time27 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance370 pF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation45 W

Min Breakdown Voltage55 V

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Channels1

Number of Elements1

On-State Resistance70 mΩ

Package Quantity1000

PackagingBulk

Power Dissipation45 W

Rds On Max70 mΩ

Resistance70 mΩ

Rise Time34 ns

Schedule B8541290080

TerminationThrough Hole

Threshold Voltage2 V

Turn-Off Delay Time19 ns

Turn-On Delay Time4.9 ns

Voltage Rating (DC)55 V

Dimensions

Height19.8 mm

Lead Pitch2.54 mm

Length10.5156 mm

Width4.69 mm