Infineon IRF7665S2TRPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 0.98
Stock
178,040
0
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
4.1 A
4.1 A
Threshold Voltage
4 V
4 V
Rds On Max
62 mΩ
62 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
30 W
30 W
Input Capacitance
515 pF
515 pF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRFR3910TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.115Ohm;ID 16A;D-Pak (TO-252AA);PD 79W
STMicroelectronicsSTD10NF10T4
N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
Beschreibungen
Beschreibungen von Infineon IRF7665S2TRPBF, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH Si 100V 14.4A 6-Pin Direct-FET SB T/R
A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes., MG-WDSON-4, RoHS
Infineon SCT
MOSFET, N-CH, 100V, 14.4A, SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14.4A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied
Benefits: RoHS Compliant; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Class-D Audio Amplifier Applications; Low Qg for better THD and improved efficiency; Low Qrr for better THD and improved efficiency; Low package stray inductance for reduced ringing and lower EMI | Target Applications: AC-DC; Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4.1 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance62 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time3.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance515 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation30 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance62 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation30 W
Rds On Max62 mΩ
Rise Time6.4 ns
Threshold Voltage4 V
Turn-Off Delay Time7.1 ns
Turn-On Delay Time3.8 ns
Dimensions
Height508 µm
Length4.826 mm
Width3.9624 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen