Infineon IRF7509TRPBF

30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
$ 0.657
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
Arrow ElectronicsIRF7509TRPBF31
RS (Formerly Allied Electronics)IRF7509TRPBF01Bulk
3h
Microchip USAIRF7509TRPBF3803K
8h
Weyland Electronics Group Pte. Ltd.IRF7509TRPBF1.5551Tape & Reel
14h
Win Source
2
WS-IRF750919.85011
15h

Datenblätter und Dokumente

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Datasheet8 SeitenVor 21 Jahren

IHS

Jameco

iiiC

RS (Formerly Allied Electronics)

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Lieferkette

Country of OriginMainland China, Thailand, USA
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2012-07-27
LTD Date2013-01-27

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Beschreibungen

Beschreibungen von Infineon IRF7509TRPBF, die von den Distributoren bereitgestellt werden.

30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.11ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Cont Current Id N Channel:2.7A; Cont Current Id P Channel:2A; Current Id Max:2.7A; On State Resistance @ Vgs = 10V N Channel:900mohm; On State Resistance @ Vgs = 10V P Channel:170mohm; On State Resistance @ Vgs = 4.5V N Channel:140mohm; On State Resistance @ Vgs = 4.5V P Channel:300mohm; Package / Case:Micro8; Power Dissipation Pd:1.25W; Pulse Current Idm N Channel:21A; Pulse Current Idm P Channel:16A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds P Channel:10V; Voltage Vgs Rds on Measurement:10V
element14 APAC
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 240 / Power Dissipation (Pd) W = 1.25
Distrelec

Bilder

element14
Augswan
TME
element14
Burklin Elektronik
RS
Future Electronics
iiiC
DKO Electronshik
International Rectifier
Distrelec
LZChips
RS (Formerly Allied Electronics)
iiiC

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRF7509
  • IRF7509TRPBF.
  • SP001570444