Infineon IPI65R310CFDXKSA1

Transistor MOSFET N-Channel 650V 11.4A 3-Pin TO-262 Tube

MOSFET N-CH 650V 11.4A TO262-3 N-Channel 650 V 11.4A (Tc) 104.2W (Tc) Through Hole PG-TO262-3

Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

104.2W(Tc) 20V 4.5V@ 440µA 41nC@ 10 V 1individualNChannel 650V 310mΩ@ 4.4A,10V 11.4A 1.1nF@100V I2PAK Through hole mounting 9.45mm(height)

650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility