Infineon IPD80R1K0CEBTMA1
$ 0.603
Obsolete
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
InfineonSPD06N80C3ATMA1
Power MOSFET, N Channel, 800 V, 6 A, 0.78 ohm, TO-252 (DPAK), Surface Mount
InfineonSPD06N60C3ATMA1
Power MOSFET, N Channel, 650 V, 6.2 A, 0.68 ohm, TO-252 (DPAK), Surface Mount
VishaySIHD6N62E-GE3
78W(Tc) 30V 4V@ 250¦ÌA 34nC@ 10 V 1N 620V 900m¦¸@ 3A,10V 6A 578pF@100V TO-252AA 2.38mm
STMicroelectronicsSTD11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
Beschreibungen
Beschreibungen von Infineon IPD80R1K0CEBTMA1, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R
Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageTO-252-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)5.7 A
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance785 pF
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance950 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation83 W
Rds On Max950 mΩ
Rise Time15 ns
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns
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