onsemi FCD850N80Z

N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK
$ 1.37
Production
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
Arrow ElectronicsFCD850N80Z2.5001
Verical
2
FCD850N80Z805209
Rochester ElectronicsFCD850N80Z805
3h
DigiKey
3
488-FCD850N80ZCT-ND17.9871Cut Tape
Flip ElectronicsFCD850N80Z5.000
6d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi FCD850N80Z herunter.

Master Electronics

Datasheet0 SeitenVor 0 Jahren

Upverter

IHS

onsemi

Future Electronics

Bestandsverlauf

3-Monats-Trend:
-6.97%
Powered bySpectra logo

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-11-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Verwandte Teile

VishaySIHD6N65E-GE3
E Series N-Channel 650 V 78 W 0.6 O 48 nC Surface Mount Power Mosfet - DPAK
Details
InfineonSPD06N60C3ATMA1
Power MOSFET, N Channel, 650 V, 6.2 A, 0.68 ohm, TO-252 (DPAK), Surface Mount
Details
InfineonIPD60R600C6ATMA1
Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R
Details
InfineonIPD65R600C6BTMA1
Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R / 650V CoolMOS C6 Power Transistor
Details
STMicroelectronicsSTD11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
Details
VishaySIHD6N62E-GE3
78W(Tc) 30V 4V@ 250¦ÌA 34nC@ 10 V 1N 620V 900m¦¸@ 3A,10V 6A 578pF@100V TO-252AA 2.38mm
Details

Beschreibungen

Beschreibungen von onsemi FCD850N80Z, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK
onsemi
MOSFET N-CH 800V 6A DPAK / isc N-Channel MOSFET Transistor
Win Source
75W(Tc) 20V 4.5V@ 600¦ÌA 29nC@ 10 V 1N 800V 850m¦¸@ 3A,10V 6A 1.315nF@100V TO-252AA 2.52mm
UnikeyIC
Power Field-Effect Transistor, 6A I(D), 800V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Semicontronic
MOSFET, N-CH, 800V, 6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.71ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Pow
Farnell
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Fairchild Semiconductor

Bilder

element14 APAC
LZChips
Future Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd