Infineon AUIRFZ44Z
$ 0.18
Obsolete
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Price @ 1000
$ 0.18
$ 0.458
Stock
67,810
408,394
Authorized Distributors
3
4
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
51 A
51 A
Threshold Voltage
2 V
4 V
Rds On Max
13.9 mΩ
13.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
80 W
80 W
Input Capacitance
1.42 nF
1.42 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-11-15
LTD Date2021-05-15
Verwandte Teile
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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 52A;TO-220 Full-Pak;PD 58W;-55deg
InfineonIRFI1010NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 49A;TO-220 Full-Pak;PD 58W;-55de
STMicroelectronicsSTP55NF06FP
N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220FP package
STMicroelectronicsSTP80NF55-06FP
STP80NF55-06FP N-channel MOSFET Transistor, 60 A, 55 V, 3-Pin TO-220FP
Beschreibungen
Beschreibungen von Infineon AUIRFZ44Z, die von den Distributoren bereitgestellt werden.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 51A Automotive 3-Pin(3+Tab) TO-220AB Tube
MOSFET N-Channel 55V 51A HEXFET TO220AB
Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET,N CH,55V,51A,TO220AB; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:80W; Voltage Vgs Max:20V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)51 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance13.9 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.42 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance13.9 mΩ
Package Quantity1000
Power Dissipation80 W
Rds On Max13.9 mΩ
Rise Time68 ns
Threshold Voltage2 V
Turn-Off Delay Time33 ns
Turn-On Delay Time14 ns
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen