Infineon AUIRF1010ZSTRL
$ 2.248
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | AUIRF1010ZSTRL | 0 | 800 | Bulk | 11h | |||||||
| Avnet | AUIRF1010ZSTRL | 0 | 800 | 2d | ||||||||
| Microchip USA | AUIRF1010ZSTRL | 175 | 600 | 11h | ||||||||
| Worldway Electronics | AUIRF1010ZSTRL | 16.627 | 7 | Tape & Reel | 18h | |||||||
| Fmall Co., Limited | AUIRF1010ZSTRL | 13.620 | >1wk |
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 2.248
$ 4.3
Stock
41,979
70,808
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
94 A
94 A
Threshold Voltage
-
2 V
Rds On Max
7.5 mΩ
7.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
2.84 nF
2.84 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-02-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
Verwandte Teile
STMicroelectronicsSTB60N55F3
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in D2PAK package
Beschreibungen
Beschreibungen von Infineon AUIRF1010ZSTRL, die von den Distributoren bereitgestellt werden.
AUTOMOTIVE MOSFET 55V, 94A, 7.5 MOHM, 63 NC QG, D2PAK
Trans MOSFET N-CH 55V 94A 3-Pin(2+Tab) D2PAK T/R
Single N-Channel 55 V 7.5 mOhm 95 nC Automotive HEXFET® Power Mosfet - TO-252-3
Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)94 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time92 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.84 nF
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation140 W
Rds On Max7.5 mΩ
Rise Time150 ns
Turn-Off Delay Time36 ns
Turn-On Delay Time18 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.3472 mm