Diodes Inc. ZXMN3A06DN8TA
$ 0.712
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | ZXMN3A06DN8TA | 204 | 204 | |||||||||
| Arrow Electronics | ZXMN3A06DN8TA | 204 | 204 | |||||||||
| DigiKey | ZXMN3A06DN8CT-ND | 1.413 | 1 | Cut Tape | ||||||||
| TME | ZXMN3A06DN8T-DIO-0 | 500 | 500 | 6h | ||||||||
| Avnet | ZXMN3A06DN8TA | 0 | 500 | 2d |
Bestandsverlauf
3-Monats-Trend: +377%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-15
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
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Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8
Beschreibungen
Beschreibungen von Diodes Inc. ZXMN3A06DN8TA, die von den Distributoren bereitgestellt werden.
ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R / MOSFET 2N-CH 30V 4.9A 8-SOIC
MOSFET, DUAL, N, 30V, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Powe
Aliasnamen des Herstellers
Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Bestandsverlauf
3-Monats-Trend: +377%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
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Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)4.9 A
Current Rating4.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time9.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance796 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2.1 W
Rds On Max35 mΩ
Resistance35 mΩ
Rise Time6.4 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time21.6 ns
Turn-On Delay Time3 ns
Voltage Rating (DC)30 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen