Infineon IRF7313PBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7313PBF | 0 | 3800 | Bulk | 17h | |||||||
| Farnell | IRF7313PBF | 0 | 5 | 3h | ||||||||
| Win Source | WS-IRF7313PBF | 39.900 | 110 | 5h | ||||||||
| Worldway Electronics | IRF7313PBF | 13.802 | 7 | Tube | 3h | |||||||
| ICPartonline | IRF7313PBF | 14.240 | >1wk |
CAD-Modelle
Laden Sie Infineon IRF7313PBF Symbol-, Footprint- und 3D-STEP-Modelle von unseren zuverlässigen Partnern herunter.
| QUELLE | eCAD | mCAD | DATEIEN |
|---|---|---|---|
 Component Search Engine | SymbolFußabdruck | 3D | Herunterladen |
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-02-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Beschreibungen
Beschreibungen von Infineon IRF7313PBF, die von den Distributoren bereitgestellt werden.
Transistor MOSFET Array Dual N-CH 30V 6.5A 8-Pin SOIC Tube
Dual N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL, NN, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:30A; Row Pitch:6.3mm; SMD Marking:7313; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.5 A
Current Rating6.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance29 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max29 mΩ
Recovery Time68 ns
Resistance29 mΩ
Rise Time8.9 ns
Threshold Voltage1 V
Turn-Off Delay Time26 ns
Turn-On Delay Time8.1 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Row Spacing6.3 mm
Width4.05 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen