Diodes Inc. ZXMC3A17DN8TA

Name: Diodes Inc. ZXMC3A17DN8TA
Brand: Diodes Inc.
SKU: ZXMC3A17DN8TA

Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8

$ 0.529

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Distributor		SKU		Min	Pkg
Newark	2	ZXMC3A17DN8TA	168	1	Cut Tape	1,740	1,170	0,948	0,948	0,948
Arrow Electronics		ZXMC3A17DN8TA	1.000	500					0,336	0,336
Verical		ZXMC3A17DN8TA	1.000	500					0,336	0,336
TME	2	ZXMC3A17DN8TA	15	1		1,140	0,750	0,545	0,466	0,466	22h
Avnet		ZXMC3A17DN8TA	0	500					0,460	0,450	1d

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3-Monats-Trend: -14.16%

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Newark

Datasheet10 SeitenVor 19 Jahren

IHS

element14 APAC

Diodes Inc SCT

Future Electronics

Bestandsverlauf

3-Monats-Trend:

-14.16%

Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-10-01

Lifecycle StatusProduction (Last Updated: 5 months ago)

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Beschreibungen von Diodes Inc. ZXMC3A17DN8TA, die von den Distributoren bereitgestellt werden.

Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8

Future Electronics

Trans MOSFET N/P-CH 30V 4.1A/3.4A 8-Pin SOIC T/R

Verical

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, N+P, 30V VDS, 20±V VGS

Diodes Inc SCT

MOSFET N/P-CHAN DUAL 30V 8SOIC

DigiKey

MOSFET, N P CHANNEL, DUAL, ENHANCE,30V, SO8

RS (Formerly Allied Electronics)

Small Signal Field-Effect Transistor, 5.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, DUAL, NP, 30V, SO-8; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.4A; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Bilder

TME

iiiC

Aliasnamen des Herstellers

Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:

Diodes Incorporated
DIODE
DII
DIO
DIODE INC
DC COMPONENTS
DIOD
YENYO
Diodes Zetex
MICRO COM
MICRO ELECTRONIC INS
Diodes Inc / Zetex
DIODE INCORPORATED
DIODES ZET
DIODSE
DINC
Diodes Inc Inc
DIOINC
FORMOSA MS
DIODES INC(RoHS)
ZETEX (DIODES INC)
DIODES INC/VISHAY
Diodes Incorporation
ZETEXDIODES
DIODES INC/VISH
Pericom
Diodes Incorporated

Bestandsverlauf

3-Monats-Trend: -14.16%

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Technische Spezifikationen

Physical

Case/PackageSOIC

MountSurface Mount

Number of Pins8

Number of Terminals8

Weight73.992255 mg

Technical

Continuous Drain Current (ID)5.4 A

Current Rating5.4 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance50 mΩ

Drain to Source Voltage (Vdss)30 V

Fall Time8.7 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance600 pF

Max Operating Temperature150 °C

Max Power Dissipation2.1 W

Min Breakdown Voltage30 V

Min Operating Temperature-55 °C

Number of Channels2

Number of Elements2

Power Dissipation2.1 W

Rds On Max50 mΩ

Resistance70 mΩ

Rise Time2.9 ns

Threshold Voltage1 V

Turn-Off Delay Time29.2 ns

Turn-On Delay Time1.7 ns

Dimensions

Height1.5 mm

Length5 mm

Width4 mm