Diodes Inc. ZTX853
$ 0.58
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: +22.80%
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Price @ 1000
$ 0.58
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Stock
265,756
51,479
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
Max Collector Current
4 A
4 A
Transition Frequency
130 MHz
130 MHz
Collector Emitter Saturation Voltage
200 mV
200 mV
hFE Min
100
20
Power Dissipation
1.2 W
1.2 W
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
LTB Date2026-10-28
LTD Date2027-04-28
Beschreibungen
Beschreibungen von Diodes Inc. ZTX853, die von den Distributoren bereitgestellt werden.
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ZTX853 Series NPN 4 A 100 V Silicon Planar Medium Power Transistor - TO-92-3
Bipolar Transistors - BJT NPN Medium Power
200mV@ 400mA,4A NPN 1.2W 6V 50nA 200V 100V 4A EP-3SC , 4.57mm*2.28mm*3.9mm
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:100V; Typ Gain Bandwidth ft:130MHz; Power Dissipation Pd:1.2W; DC Collector Current:4A; DC Current Gain hFE:200; Operating Temperature ;RoHS Compliant: Yes
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:1.2W; DC Collector Current:4A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4A; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:130MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1.2W; Power Dissipation Ptot Max:1.2W; Pulsed Current Icm:10A; Termination Type:Through Hole; Voltage Vcbo:200V
Aliasnamen des Herstellers
Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Bestandsverlauf
3-Monats-Trend: +22.80%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)200 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current4 A
Current Rating4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min100
Max Collector Current4 A
Max Frequency130 MHz
Max Operating Temperature200 °C
Max Power Dissipation1.2 W
Manufacturer Package IdentifierE-Line
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1.2 W
Transition Frequency130 MHz
Voltage Rating (DC)100 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen