onsemi 2N5830

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 80 @ 10mA 5V 200mA 625mW 120V
$ 0.044
Obsolete
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DistributorSKUMinPkg
Verical
2
2N583015.5906834
Rochester Electronics2N583040.597
22h
Win SourceWS-4182858.000755
23h
Worldway Electronics2N583010.0977Bulk
22h
Fly-Wing Technology2N583028.625
20h

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IHS

Datasheet2 SeitenVor 0 Jahren
Datasheet0 SeitenVor 0 Jahren

Fairchild Semiconductor

iiiC

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1970-08-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23

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Beschreibungen

Beschreibungen von onsemi 2N5830, die von den Distributoren bereitgestellt werden.

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 80 @ 10mA 5V 200mA 625mW 120V
Fly-Wing Technology
Small Signal Bipolar Transistor, 0.2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
IHS
PNP Silicon High Current Transistor 100V 200mA TO-92
Jameco
Trans GP BJT NPN 100V 0.2A 3-Pin TO-92 Bulk
Verical
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Farnell
NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics.
Fairchild Semiconductor
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:100V; Power Dissipation, Pd:625mW; DC Collector Current:200mA; DC Current Gain Max (hfe):80; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
Newark

Bilder

Jameco
Newark
iiiC
Rochester Electronics

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  • SCG
  • ON Semiconductor Cor
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  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd