备用零件
Price @ 1000
$ 9.872
$ 11.423
Stock
84,961
79,444
Authorized Distributors
4
5
Mount
-
-
Case/Package
TO-247-3
TO-263-7
Drain to Source Voltage (Vdss)
900 V
900 V
Continuous Drain Current (ID)
36 A
35 A
Threshold Voltage
2.1 V
2.1 V
Rds On Max
-
-
Gate to Source Voltage (Vgs)
19 V
19 V
Power Dissipation
125 W
113 W
Input Capacitance
-
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-05-18
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 5 years ago)
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描述
由其分销商提供的 Wolfspeed C3M0065090D 的描述。
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Wolfspeed
MOSFET N-CH 900V 36A TO247-3 / Trans MOSFET N-CH SiC 900V 36A 3-Pin(3+Tab) TO-247
Power Field-Effect Transistor, 36A I(D), 900V, 0.078ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
MOSFET, N-CH, 900V, 36A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; MSL:- RoHS Compliant: Yes
制造商别名
Wolfspeed 在全球拥有多个品牌，分销商可将其用作替代名称。Wolfspeed 也可称为以下名称：
- Wolfspeed Inc
- Cree/Wolfspeed
- Wolfspeed - a Cree company
- Wolfspeed / Cree
- WOLFSPEED INC (CREE)
- WOLFSOn semi
技术规格
Physical
Case/PackageTO-247-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)36 A
Current Rating36 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)900 V
Gate to Source Voltage (Vgs)19 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation125 W
Schedule B8541290080
Threshold Voltage2.1 V
Turn-Off Delay Time20 ns
Turn-On Delay Time45 ns
Dimensions
Height25.5 mm