供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2016-04-28
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2025-10-08
LTD Date2026-04-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
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描述
由其分销商提供的 onsemi FCH085N80-F155 的描述。
N-Channel Power MOSFET, SUPERFET® II, 800 V, 46 A, 85 mΩ, TO-247
MOSFET N-CH 800V 46A TO247 / N-Channel 800 V 46A (Tc) 446W (Tc) Through Hole TO-247-3
MOSFET, N CHANNEL, 800V, 46A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.067ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)46 A
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Max Operating Temperature150 °C
Max Power Dissipation446 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Schedule B8541290080
Threshold Voltage4.5 V