STMicroelectronics STW45NM60

Name: STMicroelectronics STW45NM60
Brand: STMicroelectronics
SKU: STW45NM60

Mosfet Transistor, N Channel, 45 A, 650 V, 110 Mohm, 10 V, 4 V |Stmicroelectronics STW45NM60

$ 6.388

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	STW45NM60	3,924	1		8.460	6.465	5.772	5.772	5.772
Verical	2	STW45NM60	3,924	2			6.457	5.764	5.764	5.764
TME	2	STW45NM60	27	1		10.120	7.910	6.480	5.770	5.770	21h
DigiKey		497-2768-5-ND	386	1	Tube	14.760	14.760	8.978	7.004	7.004
Future Electronics		STW45NM60	0	5	Tube		5.270	5.080	4.890	4.890

数据表和文档

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Factory Futures

Datasheet12 页20 年前

Components Direct

Farnell

iiiC

Jameco

库存历史记录

3 个月趋势:

-9.20%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 STMicroelectronics STW45NM60 的描述。

Mosfet Transistor, N Channel, 45 A, 650 V, 110 Mohm, 10 V, 4 V |Stmicroelectronics STW45NM60

Newark

STW45NM60 N-CHANNEL MOSFET TRANSISTOR, 45 A, 600 V, 3-PIN TO-247

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 45A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

ComSIT Distribution GmbH

MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P

Farnell

The MDmesh(TM) is a new revolutionary MOSFETtechnology that associates the Multiple Drain process with the Company's PowerMESH(TM) horizon-tal layout. The resulting product has an outstanding low on-resistance, impressively highdv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip tech-nique yields overall dynamic performance that is significantly better than that of similar competi-tion's products.