Vishay SI7456DDP-T1-GE3

VISHAY SI7456DDP-T1-GE3 MOSFET Transistor, N Channel, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V
$ 0.819
Production
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
Avnet
2
63W41482731
2d
Newark
2
SI7456DDP-T1-GE35,3621
Arrow Electronics
2
SI7456DDP-T1-GE31,1631
Verical
2
SI7456DDP-T1-GE33,0003K
RutronikSTDMOS128112,0003K
2h

数据表和文档

下载 Vishay SI7456DDP-T1-GE3 的数据表和制造商文档。

Vishay

Datasheet13 页4 年前

IHS

Upverter

Farnell

Newark

库存历史记录

3 个月趋势:
-11.80%
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供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-14
Lifecycle StatusProduction (Last Updated: 4 months ago)

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描述

由其分销商提供的 Vishay SI7456DDP-T1-GE3 的描述。

VISHAY SI7456DDP-T1-GE3 MOSFET Transistor, N Channel, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V
Fly-Wing Technology
MOSFET N-CH 100V 27.8A PPAK SO-8 / Trans MOSFET N-CH 100V 27.8A 8-Pin PowerPAK SO T/R
Win Source
Power MOSFET, N Channel, 100 V, 27.8 A, 0.017 ohm, PowerPAK SO, Surface Mount
Avnet
MOSFET, N-CH, 100V, 27.8A, PP SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:27.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Farnell

图片

Vishay
Newark
Farnell
Future Electronics
RS

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