Infineon IRF7473TRPBF

Name: Infineon IRF7473TRPBF
Brand: Infineon
SKU: IRF7473TRPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 22MILLIOHMS; Id 6.9A; SO-8; Pd 2.5W; Vgs +/-20

$ 0.657

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRF7473TRPBF	74,878					0.791	0.657	0.585	23h
RS (Formerly Allied Electronics)		IRF7473TRPBF	0	4K	Bulk					1.793	16h
Farnell	2	IRF7473TRPBF	0	1	Cut Tape	2.220*	2.220*	2.220*	2.220*	2.220*	23h
Win Source		WS-159971	3,130	15				2.597	2.328	2.328	1d
Worldway Electronics		IRF7473TRPBF	11,769	7	Tape & Reel		0.145	0.141	0.133	0.133	23h

数据表和文档

下载 Infineon IRF7473TRPBF 的数据表和制造商文档。

IHS

Datasheet8 页21 年前

Newark

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

+86.44%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-11-20

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

描述

由其分销商提供的 Infineon IRF7473TRPBF 的描述。

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 22Milliohms;ID 6.9A;SO-8;PD 2.5W;VGS +/-20

RS (Formerly Allied Electronics)

Single N-Channel 100 V 26 mOhm 61 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET N-CH 100V 6.9A 8-Pin SOIC T/R

Avnet

100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

MOSFET, N-CH, 100V, 6.9A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.022ohm; Available until stocks are exhausted Alternative available

Farnell

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.9A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon