Vishay SI4056DY-T1-GE3

MOSFET, N-CH, 100V, 11.1A, SOIC-8; Transistor Polarity: N Channel; Continuous Dra
$ 0.407
NRND
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
Avnet
2
SI4056DY-T1-GE32,5002500
2d
Newark
2
SI4056DY-T1-GE31,1801Cut Tape
Future ElectronicsSI4056DY-T1-GE32,5002500Tape & Reel
CoreStaffST636998612,5001
15h
DigiKey
3
SI4056DY-T1-GE3CT-ND30,6161Cut Tape

数据表和文档

下载 Vishay SI4056DY-T1-GE3 的数据表和制造商文档。

Newark

Datasheet9 页9 年前
Datasheet10 页13 年前
Datasheet10 页10 年前

element14 APAC

Farnell

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:
+23.64%
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供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-08
Lifecycle StatusNRND (Last Updated: 4 months ago)

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描述

由其分销商提供的 Vishay SI4056DY-T1-GE3 的描述。

MOSFET, N-CH, 100V, 11.1A, SOIC-8; Transistor Polarity:N Channel; Continuous Dra
Newark
SI4056DY-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 11.1 A, 100 V, 8-PIN SOIC
RS (Formerly Allied Electronics)
MOSFET N-CH 100V 11.1A 8SOIC / Trans MOSFET N-CH 100V 11.1A 8-Pin SOIC N T/R
Win Source
Power MOSFET, N Channel, 100 V, 11.1 A, 0.017 ohm, SOIC, Surface Mount
Avnet
Si4056DY Series 100 V 11.1 A 900 pF Surface Mount N-Channel Mosfet - SOIC-8
Future Electronics
MOSFET N-Channel 100V 7.3A (Ta), 11.1A (Tc) 8-SOIC T/R
ComSIT Distribution GmbH
Small Signal Field-Effect Transistor, 7.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Semicontronic
MOSFET, N-CH, 100V, 11.1A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited
Farnell

图片

Vishay
RS
TME
Farnell
RS (Formerly Allied Electronics)
Future Electronics
Component Sense
Component Sense

制造商别名

Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：

  • VIS
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