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VishaySI7456DDP-T1-GE3
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描述
由其分销商提供的 Vishay SI7454DDP-T1-GE3 的描述。
VISHAY SI7454DDP-T1-GE3 MOSFET Transistor, N Channel, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
Transistor: N-MOSFET; unipolar; 100V; 21A; 0.033ohm; 19W; -65+150 deg.C; SMD; PowerPAK-SO-8
Single N-Channel 100 V 33 mOhm SMT TrenchFET Power Mosfet - PowerPAK SO-8
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:21A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:29.7W; No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI7454DDP-T1-GE3.
MOSFET, N-CH, 100V, 21A, PP SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:29.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance33 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance550 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation29.7 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation29.7 W
Rds On Max33 mΩ
Resistance33 MΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time16 ns
Turn-On Delay Time10 ns
Dimensions
Height1.12 mm
Length6.25 mm
Width5.26 mm