备用零件
Price @ 1000
$ 0.21
$ 0.232
Stock
674,498
2,520,009
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
2.6 A
2.6 A
Threshold Voltage
400 mV
850 mV
Rds On Max
57 mΩ
57 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
710 mW
710 mW
Input Capacitance
112 pF
-
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-29
Lifecycle StatusNRND (Last Updated: 4 months ago)
描述
由其分销商提供的 Vishay SI2302CDS-T1-E3 的描述。
MOSFET, N CH, 20V, 2.6A, SOT-23-3; Transistor Polarity:N Channel; Continuous Dra
Single N-Channel 20 V 0.057 Ohm 0.71 W Surface Mount Power Mosfet - SOT-23-3
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R
N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N CH, 20V, 2.6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:710mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance57 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance112 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation860 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation710 mW
Rds On Max57 mΩ
Resistance57 mΩ
Rise Time7 ns
Schedule B8541210080
Threshold Voltage400 mV
Turn-Off Delay Time30 ns
Turn-On Delay Time8 ns
Dimensions
Height1.12 mm
Length3.04 mm
Width1.4 mm